Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

This paper presents a 7-parameter analytical model of the MOS transistor based on inversion charge targeted at development simplified circuit design methodologies that take into account physics transistor. The proposed design-oriented allows for first time to describe both main short-channel effects advanced nanometric technologies and dependence drain current voltage, while remains valid all bias regimes (from weak strong inversion) operating regions (linear saturated). A simple procedure device is estimate parameters given technology. Furthermore, expressions derivatives are developed targeting different scenarios. accuracy validated by direct comparison silicon measurements N-MOS transistors in 28 nm FD-SOI technology channel width $1~\mu \text{m}$ lengths 30 nm, 60 150 also simulations performed with an industry-standard compact model.